DMP2037UFCL-7

$0.11

Description：MOSFET BVDSS: 8V~24V U-DFN1616-6
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:4affede49a40 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V U-DFN1616-6
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：28mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 8 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：806 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN1616-6 (Type K)
Package / Case：6-PowerUFDFN

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DMP2037UFCL-7

Overview

The DMP2037UFCL is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a -20V drain-source voltage rating and an on-resistance of 28mΩ at VGS = -4.5V, or 43mΩ at VGS = -2.5V. The device supports continuous drain currents of -8A at +25°C and -6A at +70°C. Packaged in a U-DFN1616-6 (Type K) case, it includes gate protection diodes and ESD protection.

Feature Summary

Low on-state resistance to minimize conduction losses
Fast switching speed with low input capacitance
Integrated gate protection diode and ESD protection

Applications

Load Switch applications

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the required tape and reel packaging quantity of 3,000 units. Confirm that the U-DFN1616-6 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by your project standards.

Selection Notes

Select this component when a compact P-channel switch is needed for low-voltage DC loads. The U-DFN1616-6 package offers a small footprint suitable for space-constrained designs. Evaluate thermal performance based on the junction-to-ambient resistance of 114 °C/W for single-sided FR-4 mounting.

Part Context

This part belongs to Diodes Incorporated's portfolio of advanced P-channel MOSFETs. It utilizes a 'Green' molding compound and NiPdAu terminal finish over a copper leadframe. The device is fully lead-free and complies with EU directives regarding hazardous substances.