DMP2039UFDE-7

$0.50

Description：MOSFET P-CH 25V 6.7A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:fa26a1f068fb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 25V 6.7A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：6.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：27mOhm @ 6.4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：48.7 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：2530 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type E)
Package / Case：6-PowerUDFN

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DMP2039UFDE-7

Overview

The DMP2039UFDE-7 is a P-channel enhancement mode MOSFET in a U-DFN2020-6 (Type E) package. It features a drain-source voltage of -25V and a maximum on-resistance of 27mΩ at VGS = -4.5V, or 40mΩ at VGS = -1.8V. Continuous drain current ratings are -6.7A at TA = +25°C with VGS = -4.5V, and -5.4A with VGS = -1.8V. The device includes an integrated gate protection diode and is qualified to JEDEC standards for high reliability.

Feature Summary

Low RDS(ON) minimizes on-state losses
0.6mm profile ideal for low profile applications
ESD protected gate
Lead-free finish; RoHS compliant

Applications

Load Switching
Battery Management Application
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000 units per tape and reel packaging configuration. Confirm that the U-DFN2020-6 (Type E) case material matches the required UL flammability classification rating of 94V-0. Ensure the NiPdAu over copper leadframe terminal finish meets the solderability requirements defined by MIL-STD-202, Method 208.

Selection Notes

Select this component when designing circuits requiring a compact P-channel MOSFET with a 25V breakdown voltage. The low thermal resistance and small PCB footprint make it suitable for space-constrained power management designs. Verify that the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.

Part Context

This part belongs to Diodes Incorporated's new generation of MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. It is intended for high-efficiency power management applications where low profile and minimal on-state losses are critical design parameters.

Replacement Considerations

For automotive applications requiring specific change control, refer to the related automotive grade parts with the Q-suffix. These alternatives are qualified to AEC-Q100/101/200 standards, are PPAP capable, and are manufactured in IATF 16949 certified facilities.