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Product Detailed Parameters
- Description：MOSFET P-CH 25V 7.3A 6DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：7.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：26mOhm @ 6.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28.2 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2530 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：690mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN2020-6
- Package / Case：6-PowerXDFN
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Overview
The DMP2039UFDE4-7 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -25V drain-source breakdown voltage and a maximum on-resistance of 26mΩ at VGS = -4.5V, with a continuous drain current rating of -7.3A at TA = 25°C. The device utilizes an X2-DFN2020-6 package with a 0.4mm profile. Electrical characteristics include a gate threshold voltage ranging from -0.4V to -1.0V, total gate charge of 28.2nC, and input capacitance of 2530pF. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state power losses
- 0.4mm profile ideal for low height applications
- ESD protected gate structure
- Qualified to AEC-Q101 standards
Applications
- Load switching
- Battery management systems
- Power management functions
Procurement Notes
Verify the component datasheet revision DS35675 Rev. 3 - 2 matches the delivered units. Confirm the X2-DFN2020-6 package dimensions and terminal finish (NiPdAu over Copper leadframe). Ensure compliance with RoHS directives and verify the absence of purposely added lead, halogens, and antimony as specified in the manufacturer documentation.
Selection Notes
Select this component when a compact P-channel MOSFET with high efficiency is required. The low thermal resistance and small footprint support dense PCB layouts. Verify that the -25V rating aligns with system voltage requirements and confirm that the gate drive voltage meets the minimum threshold for optimal conduction.
Part Context
This part belongs to the DMP2039 series of P-channel MOSFETs designed for high-efficiency power management. It shares the X2-DFN2020-6 form factor with other devices in the family but offers specific electrical parameters optimized for load switching and battery protection circuits within portable electronics.
Replacement Considerations
Check pinout compatibility and package dimensions against alternatives. Verify that replacement parts meet or exceed the -25V breakdown voltage and -7.3A current ratings. Ensure thermal performance and gate charge specifications are suitable for the existing circuit design.
