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Product Detailed Parameters
- Description：MOSFET P-CH 20V 13A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：13A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：32mOhm @ 8.9A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19 nC @ 8 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：834 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.8W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
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Overview
The DMP2040UFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -13A at +25°C case temperature. The device offers a low on-resistance of 32mΩ at VGS = -4.5V and 53mΩ at VGS = -2.5V. Packaged in a U-DFN2020-6 (Type F) footprint, it supports a total power dissipation of 0.8W at +25°C ambient temperature with a thermal resistance of 149°C/W. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Designed for high efficiency power management applications with minimized on-state resistance.
- Features a low profile of 0.6mm, suitable for space-constrained designs.
- Includes an exposed drain pad for improved thermal performance.
- Compliant with RoHS standards and free of halogens and antimony.
Applications
- Battery Management Systems
- DC-DC Converters
- General Power Management Functions
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the U-DFN2020-6 (Type F) package dimensions align with your PCB layout requirements. Ensure compatibility with NiPdAu terminal finishes for solderability per MIL-STD-202 Method 208. Check for any automotive qualification requirements if AEC-Q100 compliance is necessary.
Selection Notes
Select this component when a compact P-channel MOSFET with low RDS(ON) is required for 20V systems. Consider the thermal resistance values based on your board copper area and mounting conditions. Evaluate gate threshold voltage characteristics against your driver logic levels. Compare switching speeds and gate charge parameters for high-frequency operation needs.
Part Context
This part belongs to the DMP2040UFDF series of P-channel MOSFETs. It utilizes the U-DFN2020-6 package type, which provides a small PCB footprint of approximately 4mm². The series is engineered to balance low conduction losses with fast switching capabilities for modern power electronics.
Replacement Considerations
Check datasheets for other Diodes Incorporated P-channel MOSFETs in the U-DFN2020-6 package. Verify pinout compatibility and thermal characteristics before substituting. Ensure voltage and current ratings meet or exceed original design specifications.
FAQ
What is the maximum continuous drain current at +25°C case temperature?
The maximum continuous drain current is -13A when the case temperature is maintained at +25°C.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control or AEC-Q100 qualification, contact Diodes Incorporated directly as standard parts may not include these certifications.
