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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X1-DSN1010-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：48mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：2.5 nC @ 4.5 V
- Vgs (Max)：-6V
- Input Capacitance (Ciss) (Max) @ Vds：218 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：860mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X1-DSN1010-4 (Type C)
- Package / Case：4-XFBGA
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Overview
The DMP2042UCP4-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DSN1010-4 (Type C) package. It features a drain-source voltage of -20V and a typical on-resistance of 37mΩ at VGS = -4.5V, supporting a continuous drain current of -3.4A. The device operates within a temperature range of -55°C to +150°C, with a power dissipation rating of 0.86W. Key electrical parameters include a gate threshold voltage of -0.8V typically, total gate charge of 2.5nC, and input capacitance of 218pF.
Feature Summary
- Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
- Features low gate charge and gate-drain charge characteristics to optimize dynamic switching behavior.
- Utilizes a small footprint X1-DSN1010-4 package with a low profile height of 0.45mm.
Applications
- Battery management systems
- Load switches
- Battery protection circuits
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the Tape & Reel packing quantity of 3000 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 3 compliance and Halogen/Antimony-free requirements if environmental standards are critical for your assembly process. Ensure the X1-DSN1010-4 package dimensions align with your PCB pad layout specifications.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The -20V rating suits low-voltage DC-DC converters and battery-powered devices. Consider the thermal resistance and power dissipation limits relative to your expected load currents and ambient operating temperatures to ensure reliable operation within the specified junction temperature range.
Part Context
This part belongs to Diodes Incorporated's DMP series of P-channel MOSFETs, which are engineered for general-purpose switching and power management tasks. The X1-DSN1010-4 package represents a modern surface-mount solution designed to reduce board space compared to traditional packages, fitting into the broader category of small-signal and logic-level power transistors.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Consult the manufacturer directly for qualified alternatives or cross-reference based on matching electrical parameters such as VDS, RDS(ON), and package type.
FAQ
What is the maximum gate-source voltage allowed for the DMP2042UCP4?
The absolute maximum rating for the Gate-Source Voltage (VGSS) is -6V.
Does the DMP2042UCP4 support automotive applications?
For automotive applications requiring AEC-Q100/101/104/200 qualification and PPAP capability, customers must contact Diodes Incorporated or their local representative directly.
