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Product Detailed Parameters
- Description：MOSFET P-CH 20V 4.2A X2DSN1010-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：45mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id：1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.9 nC @ 4.5 V
- Vgs (Max)：-20V
- Input Capacitance (Ciss) (Max) @ Vds：425 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：650mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DSN1010-3
- Package / Case：3-XFDFN
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Overview
The DMP2043UCA3-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DSN1010-3 surface-mount package. It features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current of -4.2A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 45mΩ at VGS = -4.5V and 62mΩ at VGS = -2.5V. With a total gate charge (Qg) of 1.90nC and a power dissipation rating of 0.65W, it supports efficient switching in compact designs.
Feature Summary
- Minimized on-state resistance for high efficiency power management
- Low gate charge and gate-drain charge for fast switching performance
- Ultra-small footprint with a low profile height of 0.35mm
- ESD protected to 3kV and fully RoHS compliant
Applications
- Battery management systems
- Load switch circuits
- Battery protection modules
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 5000-unit tape and reel packaging configuration. Confirm that the X2-DSN1010-3 case dimensions align with your PCB pad layout requirements. Ensure compliance with J-STD-020 moisture sensitivity level 1 handling procedures during assembly.
Selection Notes
Select this component when space constraints require a small footprint alongside moderate current handling capabilities. The low RDS(ON) makes it suitable for applications prioritizing power efficiency over extreme current loads. Verify that the -20V breakdown voltage meets the system's maximum operating voltage requirements.
Part Context
This part belongs to the DMP2043 series of P-channel MOSFETs designed by Diodes Incorporated. It utilizes silicon technology and is manufactured in lead-free, halogen-free facilities. The device is intended for general-purpose switching applications where size and efficiency are critical design parameters.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified cross-reference part numbers. Do not substitute based solely on similar electrical ratings without verifying pinout compatibility and thermal characteristics.
FAQ
What is the maximum junction temperature for the DMP2043UCA3-7?
The operating and storage temperature range extends from -55°C to +150°C.
Is the DMP2043UCA3-7 suitable for automotive applications?
For automotive applications requiring AEC-Q100/101/200 qualification and IATF 16949 manufacturing, contact Diodes Incorporated directly as standard parts may not meet these specific change control requirements.
