DMP2045UFDB-7

$0.12

Description：MOSFET 2P-CH 20V 3.1A 6UDFN
Series：-

SKU:b0be83cc1359 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 3.1A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Rds On (Max) @ Id, Vgs：90mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：634pF @ 10V
Power - Max：740mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：-
Qualification：-

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DMP2045UFDB-7

Overview

The DMP2045UFDB-7 is a dual P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type B) surface-mount package. It features a drain-source voltage rating of -20V and a maximum continuous drain current of -3.1A at +25°C. The device offers a low on-state resistance of 90mΩ at VGS = -4.5V and 120mΩ at VGS = -2.5V. Key electrical parameters include a gate threshold voltage of -1.0V maximum, total gate charge of 6.8nC, and an operating temperature range from -55°C to +150°C.

Feature Summary

Dual configuration with a compact PCB footprint of 4mm²
Low on-resistance for high-efficiency power management
ESD protected gate structure
Totally lead-free and fully RoHS compliant

Applications

Load Switch
Power Management Functions
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The suffix '-7' indicates a 3000-unit tape and reel packaging format, while '-13' denotes a 10,000-unit reel. Confirm that the required quantity aligns with these standard factory packaging configurations to ensure proper handling and availability.

Selection Notes

Select this component when a dual P-channel solution is required within a minimal 4mm² footprint. It is suitable for applications demanding low on-resistance and superior switching performance. Ensure the design accommodates the specified thermal characteristics and operates within the defined voltage and current limits for optimal reliability.

Part Context

This part belongs to the DMP series of dual P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. These devices are engineered to minimize on-state resistance while maintaining excellent switching capabilities. They are designed for surface-mount assembly using a U-DFN2020-6 case type.

Replacement Considerations

The datasheet lists DMP2045UFDB-13 as a direct alternative differing only in reel quantity (10,000 units). No other cross-references or substitute part numbers are documented in the provided source material.