DMP2065U-13

$0.06

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:34fe694f1167 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V SOT23 T&R 1
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.2 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：808 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2065U-13

Overview

The DMP2065U-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20V and a steady-state continuous drain current of -4.0A at +25°C. The device offers low on-resistance, specified as a maximum of 60mΩ at VGS = -4.5V and ID = -4.2A, or 90mΩ at VGS = -2.5V and ID = -3.4A. Packaged in an SOT-23 surface-mount case, it supports a junction temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input capacitance
Totally lead-free and fully RoHS compliant
Halogen- and antimony-free green device

Applications

High-efficiency power management applications
General-purpose load switches
Power distribution circuits

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm compliance requirements such as RoHS 3 and halogen-free status against project specifications. Ensure the selected component matches the standard SOT-23 package dimensions and marking codes provided in the official datasheet.

Selection Notes

Select this component when a compact P-channel MOSFET with a -20V rating is required. Evaluate the thermal resistance and power dissipation limits based on the expected ambient temperature and PCB copper area. Consider the gate threshold voltage characteristics to ensure compatibility with the driving logic levels in the target circuit design.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a silicon-based technology housed in a standard SOT-23 surface-mount package. The product line focuses on providing low on-resistance and fast switching capabilities for efficient power control solutions.