DMP2066LSS-13

$0.78

Description：MOSFET P-CH 20V 6.5A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:f568bd9426f1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 6.5A 8SOP
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：40mOhm @ 5.8A, 4.5V
Vgs(th) (Max) @ Id：1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：820 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.5W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：8-SO
Package / Case：8-SOIC (0.154", 3.90mm Width)

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DMP2066LSS-13

Overview

The DMP2066LSS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and an SO-8 surface-mount package. The device provides a maximum on-resistance of 40mΩ at VGS = -4.5V and 70mΩ at VGS = -2.5V, supporting steady-state drain currents up to -6.5A at +25°C. Key electrical parameters include a gate threshold voltage range of -0.6V to -1.2V, total power dissipation of 2.5W, and a thermal resistance junction-to-ambient of 50°C/W.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency applications.
Qualified to AEC-Q101 standards for automotive-grade high reliability.
Totally lead-free and fully RoHS compliant with halogen and antimony-free green device construction.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the component against the official datasheet DS31522 Rev. 4 to confirm specifications. Ensure the SO-8 package matches design requirements. Confirm compliance with RoHS directives if environmental regulations apply. Check that the part number suffix corresponds to the tape and reel packaging format.

Selection Notes

Select this component for designs requiring low on-resistance and fast switching in compact surface-mount layouts. Evaluate thermal management capabilities based on the 50°C/W junction-to-ambient resistance. Consider the -20V breakdown voltage limit when designing circuits with higher supply rails.

Part Context

This product belongs to the DMP2066 series of single P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 plastic case. The device is intended for general power switching applications within the specified voltage and current limits.