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Product Detailed Parameters
- Description：MOSFET P-CH 20V 4.5A SOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：45mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25 nC @ 10 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：2990 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-26
- Package / Case：SOT-23-6
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Overview
The DMP2066LVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20V and a continuous drain current of -4.5A at +25°C. The device exhibits a low on-state resistance, specified as a maximum of 45mΩ at VGS = -4.5V and 65mΩ at VGS = -2.5V. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT26 surface-mount package.
Feature Summary
- Low on-resistance for high-efficiency power management
- Low gate threshold voltage for improved switching performance
- Low input capacitance to support fast switching speeds
- Qualified to AEC-Q101 standards for automotive reliability
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against the required packaging quantity before purchase. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by project specifications. Ensure the selected variant matches the intended tape and reel configuration for automated assembly processes.
Selection Notes
Select this component for applications requiring a compact P-channel MOSFET with low conduction losses. The SOT26 package provides a small footprint suitable for space-constrained designs. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient operating conditions to ensure reliable operation within the rated temperature limits.
Part Context
This part belongs to the DMP2066 series of P-channel MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The LVT designation indicates specific electrical characteristics optimized for low-voltage gate drive applications within the broader product family.
Replacement Considerations
Compatible substitutes include DMP2066LSN-7 and DMP2066LDM. Verify pinout compatibility and electrical parameters such as RDS(ON) and ID ratings when substituting.
