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Product Detailed Parameters
- Description：MOSFET P-CH 20V 6.2A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：36mOhm @ 4.6A, 4.5V
- Vgs(th) (Max) @ Id：1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.4 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：1537 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：660mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMP2066UFDE-7 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -6.2A at +25°C. The device utilizes a U-DFN2020-6 Type E package with a 0.6mm profile. Key electrical parameters include a typical on-resistance of 36mΩ at VGS = -4.5V, a gate threshold voltage of -1.1V maximum, and a total gate charge of 14.4nC. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features a low profile case construction ideal for space-constrained designs.
- Includes low gate threshold voltage characteristics for efficient drive requirements.
- Constructed as a totally lead-free and fully RoHS compliant green device.
Applications
- General purpose interfacing switch
- Power management functions
- Analog switch
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental directives relevant to the target market. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Review the datasheet for any recent revisions or updates to mechanical dimensions before finalizing integration plans.
Selection Notes
Select this component when a compact P-channel solution is required for low-voltage switching tasks. Evaluate the thermal resistance values against the expected PCB copper pad layout to ensure adequate heat dissipation. Consider the gate charge specifications in relation to the driving circuit capabilities to optimize switching speeds. Verify that the package footprint aligns with the existing board design constraints.
Part Context
This part belongs to the DMP2066 series of P-channel MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance in small form factors suitable for portable and general-purpose electronics. The U-DFN2020-6 package provides a balance between thermal performance and physical size.
Replacement Considerations
For automotive applications requiring specific change control, refer to related automotive grade parts with a Q-suffix. Consult the manufacturer's website for a complete listing of compatible alternatives that meet AEC-Q standards.
