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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：45mOhm @ 4.5A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28 nC @ 8 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：1575 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2067LVTQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -20V drain-source voltage and a maximum continuous drain current of -4.2A at +25°C. The device offers low on-resistance, specified as 45mΩ at VGS = -4.5V and 65mΩ at VGS = -2.5V. It operates within a temperature range of -55°C to +150°C and is housed in a TSOT26 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for high reliability automotive use
- Low gate threshold voltage enabling efficient drive from low logic levels
- Totally lead-free and fully RoHS compliant construction
- Halogen and antimony free green device design
Applications
- General-purpose interfacing switches
- Power-management functions
Procurement Notes
Verify the specific ordering suffix matches the required packing quantity, such as -7 for 3,000 units or -13 for 10,000 units. Confirm that the component meets the necessary IATF 16949 manufacturing requirements if your application demands strict automotive change control protocols. Ensure the TSOT26 package dimensions align with your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when a low-voltage P-channel switch is required for automotive environments. The low gate threshold voltage allows compatibility with standard logic drivers. Consider the thermal resistance values provided for both minimum pad layouts and larger copper plates to ensure adequate heat dissipation under your specific load conditions and ambient temperatures.
Part Context
This part belongs to the Diodes Incorporated DMP2067 series of P-channel MOSFETs. It is specifically engineered to meet stringent automotive reliability standards. The device utilizes silicon technology and is manufactured in facilities certified to IATF 16949 standards, ensuring consistent quality for critical electronic systems.
Replacement Considerations
Direct substitutes include DMP2067LVT-7 and DMP2066LVT-7. Verify pinout compatibility and electrical parameters such as on-resistance and breakdown voltage before substitution. Ensure any replacement also meets AEC-Q101 qualification if used in automotive contexts.
