ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IC
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：16 V
- Current - Continuous Drain (Id) @ 25°C：4.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：39mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：973 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：650mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN2015-3
- Package / Case：3-XDFN
Download product information
Overview
The DMP2068UFY4 is a P-channel enhancement mode MOSFET designed for high-efficiency power management. It features a maximum drain-source voltage of -16V and low on-resistance values of 39mΩ at VGS = -4.5V, 65mΩ at VGS = -2.5V, and 103mΩ at VGS = -1.8V. The device supports continuous drain currents up to -4.8A at +25°C and includes an ESD-protected gate. Packaged in an X2-DFN2015-3 format, it offers fast switching speeds and low input capacitance.
Feature Summary
- Low on-resistance across multiple gate drive voltages
- ESD protected gate structure
- Fast switching speed with low input capacitance
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets RoHS 3 compliance standards and is halogen-free. Ensure the X2-DFN2015-3 package dimensions align with the target PCB footprint requirements before finalizing procurement.
Selection Notes
Select this component when a compact P-channel MOSFET with a -16V rating is required. Evaluate the thermal resistance characteristics against the expected ambient temperature conditions. Consider the low gate charge specifications if high-frequency switching performance is critical for the application design.
Part Context
This part belongs to Diodes Incorporated's new generation of MOSFETs engineered to minimize on-state resistance while maintaining superior switching performance. It utilizes an X2-DFN2015-3 package to provide a small form factor suitable for space-constrained electronic designs requiring efficient power handling capabilities.
Replacement Considerations
Consult official manufacturer documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing circuit designs.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -4.8A at an ambient temperature of +25°C.
Is the gate structure protected against electrostatic discharge?
Yes, the device features an ESD protected gate structure.
