DMP2069UFY4-7

$0.40

Description：MOSFET P-CH 20V 2.5A DFN2015H4-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:96a23232cef1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 2.5A DFN2015H4-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：54mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：214 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：530mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：DFN2015H4-3
Package / Case：3-XFDFN

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DMP2069UFY4-7

Overview

The DMP2069UFY4-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DFN2015-3 package. It features a drain-source voltage of -20V and a continuous drain current of -2.5A at 25°C. The device offers low on-resistance, specified as 54mΩ maximum at VGS = -4.5V and 90mΩ at VGS = -1.8V. Key electrical parameters include a gate-source voltage rating of ±8V, power dissipation of 0.53W, and thermal resistance of 231°C/W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management with minimized on-state resistance while maintaining superior switching performance.
Qualified to AEC-Q101 standards for high reliability applications.
Features ESD protection up to 3kV and low input/output leakage characteristics.

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance and halogen-free requirements as defined by the manufacturer's green policy. Ensure the application environment remains within the specified thermal and voltage limits to maintain device integrity.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with a -20V breakdown voltage. The X2-DFN2015-3 package provides a small footprint suitable for space-constrained layouts. Consider the thermal resistance and power dissipation capabilities when designing heat dissipation strategies for continuous operation.

Part Context

This part belongs to the DMP2069 series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for surface mount installation. The product line emphasizes low on-resistance and fast switching speeds for efficient power control in portable and automotive electronics.

Replacement Considerations

Consult official substitution lists or datasheets for compatible parts within the same voltage and current ratings. Verify pinout compatibility and thermal characteristics before replacing the original component in existing designs.