DMP2070UFY4-7

Overview

The DMP2070UFY4-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and an X2-DFN2015-3 package. The device offers low on-state resistance, with maximum values of 54mΩ at VGS = -4.5V, 69mΩ at VGS = -2.5V, and 90mΩ at VGS = -1.8V. Continuous drain current reaches -4.7A at +25°C. Key electrical parameters include a gate threshold voltage of -1.0V max, input capacitance of 915pF, and total gate charge of 10.2nC.

Feature Summary

• Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
• Features fast switching speed and low input capacitance to optimize dynamic performance in circuit designs.
• Includes ESD protection on the gate terminal to enhance component reliability during handling and operation.

Applications

• Backlighting circuits
• Power-management functions
• DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the X2-DFN2015-3 package dimensions align with your PCB footprint requirements. Ensure compliance with RoHS 3 and halogen-free specifications if mandated by your project standards. Cross-reference the datasheet revision number to guarantee accurate thermal and electrical parameter data.

Selection Notes

Select this component when a compact P-channel MOSFET with a -20V rating is required for space-constrained designs. Evaluate the 54mΩ on-resistance against your conduction loss targets at the intended operating gate voltage. Consider the 0.8W power dissipation limit for standard FR-4 layouts or the 1.8W capability with adequate copper heat sinking. Verify that the -1.0V maximum gate threshold voltage suits your logic drive levels.

Part Context

This part belongs to Diodes Incorporated's portfolio of small-signal field-effect transistors. It utilizes silicon technology within a lead-free, green molding compound package. The device is designed for surface-mount assembly using standard SMD/SMT processes. It falls under the broader category of single-channel enhancement mode MOSFETs optimized for low-voltage switching applications.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying absolute maximum ratings and thermal characteristics. Generic cross-references may lack the specific RDS(ON) or capacitance profiles required for high-efficiency designs.

FAQ

What is the maximum continuous drain current at +25°C?

The maximum continuous drain current is -4.7A when the gate-source voltage is -4.5V and the ambient temperature is +25°C.

How does the on-resistance vary with gate voltage?

The maximum on-resistance increases as the gate voltage magnitude decreases: it is 54mΩ at -4.5V, 69mΩ at -2.5V, and 90mΩ at -1.8V.