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The DMP2090UFDB-13 is a dual P-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a drain-source voltage of -20V and a maximum continuous drain current of -3.2A at +25°C. The on-resistance is 90mΩ at VGS = -4.5V and 120mΩ at VGS = -2.5V. Total power dissipation reaches 1.39W with a thermal resistance of 90°C/W on a 1-inch copper plate. Operating temperature ranges from -55°C to +150°C.
Verify the specific ordering suffix, as the -13 designation indicates a 10,000-unit tape and reel quantity. Confirm that the U-DFN2020-6 (Type B) package dimensions align with the target PCB footprint. Ensure compliance with J-STD-020 moisture sensitivity level 1 requirements during storage and assembly processes.
Select this component for applications requiring low on-resistance and superior switching performance. Evaluate thermal management capabilities based on the 90°C/W junction-to-ambient resistance when mounted on a 1-inch square copper plate. Consider the -20V rating for appropriate voltage headroom in portable power systems.
This dual P-channel MOSFET belongs to Diodes Incorporated's DMP series. It is designed to minimize on-state resistance while maintaining high efficiency. The device utilizes a U-DFN2020-6 package to provide a compact solution suitable for space-constrained portable electronics and power management circuits.
Consult official documentation for verified substitutes. Cross-reference parameters such as on-resistance, voltage ratings, and package dimensions before implementation.
The maximum continuous drain current is -3.2A at an ambient temperature of +25°C.
For automotive applications requiring AEC-Q100/101/104/200 qualification and PPAP capability, contact Diodes Incorporated directly.
The thermal resistance from junction to ambient is 90°C/W when mounted on a 1-inch square copper plate.