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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 5.7A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5.7A
- Rds On (Max) @ Id, Vgs：38mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21.4nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：906pF @ 10V
- Power - Max：900mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-UDFN Exposed Pad
- Supplier Device Package：U-DFN2030-6 (Type B)
- Grade：-
- Qualification：-
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Overview
The DMP2100UFU-13 is a dual P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2030-6 package and operates with a drain-source voltage of -20V. The device provides a maximum on-resistance of 38mΩ at VGS=-10V, supporting a continuous drain current of -5.7A at +25°C. Key electrical parameters include a gate threshold voltage range of -0.3V to -1.4V, total gate charge of 10.3nC at VGS=-4.5V, and input capacitance of 906pF. Thermal characteristics specify a junction-to-ambient resistance of 138°C/W in steady state.
Feature Summary
- Dual configuration integrating two independent P-channel MOSFETs within a single compact package
- Optimized for high efficiency power management through minimized on-state resistance
- Integrated ESD protection diodes on both gate terminals
- Capable of fast switching speeds with low input capacitance
Applications
- Power Management Functions
- Battery Pack Protection
- Load Switching Circuits
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging format. Confirm that the U-DFN2030-6 case outline matches the required PCB footprint dimensions. Ensure compliance with RoHS and halogen-free requirements if mandated by the target application standards.
Selection Notes
Select this component when dual isolated P-channel switching is required in a minimal footprint. Evaluate thermal performance based on the 138°C/W junction-to-ambient resistance for steady-state applications. Consider the -20V rating and 38mΩ on-resistance limits for load switch or battery pack implementations requiring efficient power control.
Part Context
This part belongs to the DMP21 series of dual P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes the U-DFN2030-6 surface-mount package designed for space-constrained designs. The product represents a newer generation optimized for balancing low on-resistance with superior switching performance.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching the dual P-channel topology, -20V breakdown voltage, and U-DFN2030-6 package dimensions.
FAQ
Does the DMP2100UFU contain integrated protection for the gates?
Yes, the datasheet specifies that both Gate 1 and Gate 2 feature integrated gate protection diodes.
What is the maximum continuous drain current for this device?
The maximum continuous drain current is -5.7A at an ambient temperature of +25°C.
Is the DMP2100UFU compliant with environmental directives?
Yes, the device is totally lead-free, fully RoHS compliant, and halogen and antimony free.
