DMP2100UQ-7

$0.37

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:51827dc601cb Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V SOT23 T&R
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 10V
Rds On (Max) @ Id, Vgs：38mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id：1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：216 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2100UQ-7

Overview

The DMP2100UQ-7 is a P-channel enhancement mode MOSFET in an SOT-23 package. It features a drain-source voltage of -20V and continuous drain currents ranging from -2.8A to -4.3A depending on gate drive conditions. On-resistance values are specified as 38mΩ at -10V, 43mΩ at -4.5V, and 75mΩ at -2.5V. The device operates within a temperature range of -55°C to +150°C.

Feature Summary

Qualified for automotive applications with AEC-Q101 certification and PPAP capability.
Designed for low on-resistance and fast switching speed.
Includes ESD protection and exhibits low input/output leakage.
Manufactured using lead-free, halogen-free, and antimony-free green materials.

Applications

Load switches
Power-management functions
Motor controls

Procurement Notes

Verify the component against the official Diodes Incorporated datasheet DS42442 Rev. 3. Confirm that the specific ordering suffix matches the required tape and reel packaging quantity. Ensure the part meets all automotive qualification standards if intended for such environments.

Selection Notes

Evaluate the thermal resistance characteristics under steady-state and transient conditions based on the PCB copper area. Consider the gate threshold voltage variations across the operating temperature range when designing the control circuitry.

Part Context

This component belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It is designed to meet stringent automotive requirements and is produced in IATF 16949 certified facilities.