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Product Detailed Parameters
- Description：MOSFET P-CH 20V 3.7A TSOT26
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：80mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2109UVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 surface-mount package with a drain-source voltage (Vdss) of -20 V and a continuous drain current (Id) of -3.7 A at +25°C. The device exhibits a maximum on-resistance (Rds(on)) of 80 mΩ at Vgs = -4.5 V and 110 mΩ at Vgs = -2.5 V. Total power dissipation is rated at 1.2 W, with an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-state resistance for minimized conduction losses
- Low gate threshold voltage enabling efficient drive control
- Low input capacitance supporting superior switching performance
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and reel specifications. Ensure compliance with RoHS directives and confirm halogen-free status requirements match project constraints. Cross-reference thermal resistance values with actual PCB copper area and mounting conditions to validate power handling capabilities.
Selection Notes
Select this component for applications requiring low-profile surface-mount integration with moderate current handling capabilities. Evaluate the trade-off between the specified Rds(on) levels at different gate voltages (-4.5 V vs -2.5 V) relative to the available drive signal amplitude. Confirm that the TSOT26 package dimensions fit within the designated footprint constraints.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining fast switching speeds for high-efficiency power management. The DMP2109UVT variant specifically utilizes the TSOT26 case style for compact board space utilization.
Replacement Considerations
Consult official manufacturer substitution guides or cross-reference databases for verified equivalent parts. Do not assume functional interchangeability based solely on similar voltage or current ratings without verifying pinout compatibility and electrical parameter alignment.
