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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：3.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：80mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP2109UVTQ is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -20V drain-source voltage rating and low on-resistance of 80mΩ at VGS = -4.5V, supporting a continuous drain current of -3.7A at +25°C. The device operates within a temperature range of -55°C to +150°C and utilizes a TSOT26 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Low on-resistance and low gate threshold voltage for efficient switching
- Low input capacitance to support high-speed operation
- Manufactured in IATF 16949 certified facilities
Applications
- General purpose interfacing switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against the required tape and reel quantity before procurement. Confirm that the component meets all applicable RoHS and halogen-free requirements as defined by the manufacturer's quality definitions. Ensure the design accounts for the thermal resistance characteristics specified for the target PCB layout conditions.
Selection Notes
Select this component when an automotive-grade P-channel MOSFET with a -20V rating is required. Consider the TSOT26 package dimensions for board space constraints. Evaluate the thermal performance based on the specific copper area available on the FR-4 substrate, as power dissipation capabilities vary significantly between minimum pad layouts and larger heat-sinking configurations.
Part Context
This part belongs to the DMP21 series of P-channel MOSFETs from Diodes Incorporated. It is specifically engineered to meet stringent automotive reliability standards, distinguishing it from standard commercial-grade transistors through its qualification processes and manufacturing certifications.
Replacement Considerations
Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before replacing existing components in established designs.
