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Product Detailed Parameters
- Description：MOSFET P-CH 20V 200MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：200mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
- Rds On (Max) @ Id, Vgs：5Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：175 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMP210DUFB4-7B is a dual N-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 5A at 25°C. The device has a maximum gate-source voltage (Vgs) of ±8V. Key electrical parameters include a drain-source on-resistance (Rds(on)) of 13mΩ at Vgs=4.5V with Id=2.5A, and a gate threshold voltage (Vgs(th)) ranging from 0.6V to 2.5V at Vds=10V and Id=250µA. Total power dissipation is rated at 1.5W at 25°C ambient temperature.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs in a single compact package for space-constrained designs.
- Low on-resistance characteristic optimized for efficient power switching and reduced conduction losses.
- Enhancement mode operation providing reliable control via standard logic-level gate drive signals.
Applications
- DC-DC converter circuits requiring synchronous rectification or high-side/low-side switching.
- Load switch applications for power distribution management in portable electronics.
- Battery protection circuits within mobile devices and consumer gadgets.
Procurement Notes
Verify the specific ordering suffix matches the required tape-and-reel quantity and packaging variant. Confirm that the component meets RoHS compliance standards if mandated by your assembly process. Ensure the supplier provides traceability documentation consistent with Diodes Incorporated manufacturing records to guarantee authenticity.
Selection Notes
Select this component when a dual N-channel topology is required within a small footprint. Evaluate the thermal performance against the 1.5W power dissipation limit under expected operating conditions. Compare the 13mΩ on-resistance against system efficiency targets and ensure the 20V voltage rating exceeds the maximum circuit supply voltage with adequate margin.
Part Context
This part belongs to Diodes Incorporated's portfolio of surface-mount power MOSFETs designed for low-voltage applications. The DUFB4 package offers a compact solution compared to discrete single-transistor implementations, facilitating denser PCB layouts while maintaining robust electrical performance for modern electronic systems.
Replacement Considerations
Check for direct substitutes such as the DMP210DUFB4-7 or other variants within the same series that may differ only in packaging or reel specifications. Verify pin compatibility and electrical parameter equivalence before substituting with components from other manufacturers.
