DMP2110U-7

$0.34

Description：MOSFET P-CH 20V 3.5A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8a017ea37c46 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.5A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：80mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6 nC @ 4.5 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2110U-7

Overview

The DMP2110U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -20V and a maximum continuous drain current (I_D) of -3.5A at +25°C. The device exhibits a static drain-source on-resistance (R_DS(ON)) of 80mΩ at V_GS = -4.5V and 110mΩ at V_GS = -2.5V. Total gate charge (Q_g) is 6.0nC, with input capacitance (C_iss) of 443pF. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed capabilities
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Backlighting
Power Management Functions
DC-DC Converters
Motor Control

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable RoHS directives and halogen-free requirements as defined by the manufacturer's quality standards before final procurement authorization.

Selection Notes

Select this component for applications requiring low on-state resistance and superior switching performance in compact SOT23 packages. Ensure the gate drive voltage aligns with the specified thresholds for optimal R_DS(ON) characteristics. Evaluate thermal dissipation constraints against the junction-to-ambient thermal resistance values provided in the datasheet.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs designed for minimizing on-state resistance while maintaining fast switching speeds. The 'U' indicates the SOT23 surface-mount case style, and the '-7' suffix denotes the standard 3,000-unit tape and reel packaging format used for automated assembly processes.