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The DMP2110UQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -3.5A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 80mΩ at VGS = -4.5V and 110mΩ at VGS = -2.5V. Total gate charge (Qg) is typically 6.0nC, with turn-on delay time of 4.0ns and turn-off delay time of 24.5ns. Operating temperature range spans from -55°C to +150°C.
Verify the exact ordering suffix (-7 or -13) against your bill of materials to ensure correct packaging quantity. Confirm that the component meets all applicable automotive quality standards if used in regulated environments. Cross-reference datasheet revision numbers during final design validation to ensure parameter consistency.
Select this component when low on-resistance and fast switching are required in compact designs. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient conditions. Ensure gate drive voltages align with the specified thresholds for optimal RDS(ON) performance.
This part belongs to the DMP2110UQ series of P-channel MOSFETs designed for general-purpose switching. It utilizes standard SOT-23 surface mount technology suitable for automated assembly processes. The product line emphasizes compliance with environmental directives and automotive industry reliability standards.
DMP2110U-7
Yes, the DMP2110UQ is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
The typical total gate charge (Qg) is 6.0nC at VGS = -4.5V, VDS = -10V, and ID = -3A.