DMP2120U-7

$0.24

Description：MOSFET P-CH 20V 3.8A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:d91414056061 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.8A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：62mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：487 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：800mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2120U-7

Overview

The DMP2120U-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, packaged in an SOT-23 case. It features a drain-source voltage (V_DSS) of -20V and a continuous drain current (I_D) of -3.8A at +25°C. The device exhibits a maximum on-resistance (R_DS(ON)) of 62mΩ at V_GS = -4.5V and 90mΩ at V_GS = -2.5V. Key electrical parameters include a gate threshold voltage (V_GS(TH)) max of -1.0V, total gate charge (Q_G) of 6.3nC, and input capacitance (C_iss) of 487pF. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Low on-resistance for high-efficiency power management
Fast switching speed with low input/output leakage
Totally lead-free and fully RoHS compliant

Applications

Battery Charging
Power Management Functions
DC-DC Converters
Portable Power Adaptors

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets the required environmental standards, including RoHS compliance and halogen-free specifications, prior to final procurement decisions.

Selection Notes

Select this component when a compact P-channel MOSFET with a -20V rating is required for portable or battery-powered applications. Ensure the design accommodates the thermal resistance characteristics and verify that the gate drive voltage levels are sufficient to achieve the specified low on-resistance performance within the target operating temperature range.

Part Context

This part belongs to the DMP series of surface-mount P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a molded plastic SOT-23 case with matte tin annealed terminals over a copper lead-frame. The device is designed to minimize on-state resistance while maintaining superior switching performance for efficient power control.

Replacement Considerations

Cross-reference with other Diodes Incorporated DMP series parts such as DMP2110U-7 for similar form-factor requirements. Verify pinout compatibility and ensure replacement devices meet identical voltage, current, and thermal ratings before substitution.