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The DMP2123LQ is a P-channel enhancement mode field effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20 V and a continuous drain current of -3.0 A at +25°C. The device offers low on-resistance, specified as 72 mΩ at VGS = -4.5V and ID = -3.5A. It operates within a temperature range of -55°C to +150°C and is housed in an SOT-23 package.
Verify the specific ordering suffix matches the required packaging quantity. The -13 suffix indicates a tape and reel quantity of 10,000 units, while the -7 suffix corresponds to 3,000 units per reel. Confirm that the component meets all applicable automotive quality requirements if used in vehicle systems.
Select this component when a small signal P-channel MOSFET with AEC-Q101 automotive qualification is required. Ensure the application voltage does not exceed the -20 V drain-source rating. Consider the thermal resistance of 90°C/W for heat dissipation calculations in the SOT-23 package.
This part belongs to the DMP2123 series of P-channel MOSFETs from Diodes Incorporated. It shares similar electrical characteristics with other variants in the family but is specifically qualified for automotive environments. The standard DMP2123L lacks the explicit AEC-Q101 qualification found in the LQ variant.
DMP2123L-7
Yes, the device is qualified to AEC-Q101 standards for high reliability and is PPAP capable.
The maximum continuous drain current is -3.0 A at an ambient temperature of +25°C.