DMP2130L-7

$0.43

Description：MOSFET P-CH 20V 3A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:da3bb1bb016e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：75mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.3 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：443 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2130L-7

Overview

The DMP2130L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20 V and a continuous drain current of -3.0 A at +25°C ambient temperature. The device exhibits a low on-state resistance of 75 mΩ at a gate-source voltage of -4.5 V, with a total gate charge of 7.3 nC. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 1.4 W of power in an SOT-23 surface-mount package.

Feature Summary

Qualified to AEC-Q101 standards for high reliability applications
Low input and output leakage characteristics
Totally lead-free and fully RoHS compliant construction
Halogen and antimony free green device

Applications

Power management circuits requiring high reliability
Battery protection systems
Load switching applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component meets all applicable environmental directives relevant to the target market. Ensure the procurement channel is authorized to guarantee product authenticity and traceability. Review the latest datasheet revision for any updates to mechanical or electrical specifications before finalizing orders.

Selection Notes

Select this component when a robust P-channel solution is needed for low-voltage switching environments. The AEC-Q101 qualification makes it suitable for automotive-grade designs. Evaluate the thermal resistance and power dissipation limits against the expected operating conditions to ensure adequate heat management within the compact SOT-23 footprint.

Part Context

This part belongs to the DMP2130L series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed for general-purpose switching and load control applications where space efficiency and reliability are critical. The device utilizes a plastic molded case with matte tin annealed terminals over a copper leadframe.

Replacement Considerations

Direct substitutes must match the -20 V drain-source voltage rating and -3.0 A continuous current capability. Verify that alternative components offer comparable on-resistance values at similar gate drive voltages. Ensure the replacement package is compatible with existing board layouts and soldering profiles.