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Product Detailed Parameters
- Description：MOSFET P-CH 25V 145MA 3DFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：25 V
- Current - Continuous Drain (Id) @ 25°C：145mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.7V, 4.5V
- Rds On (Max) @ Id, Vgs：10Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.35 nC @ 4.5 V
- Vgs (Max)：-8V
- Input Capacitance (Ciss) (Max) @ Vds：27.2 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：360mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN0806-3
- Package / Case：3-XFDFN
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Overview
The DMP213DUFA-7B is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -25V drain-source breakdown voltage and a maximum continuous drain current of -166mA at +25°C. The device exhibits a typical on-state resistance of 10Ω at VGS = -4.5V and a gate threshold voltage ranging from -0.65V to -1.5V. Packaged in an X2-DFN0806-3 footprint, it supports a junction temperature range of -55°C to +150°C with a power dissipation rating of 360mW.
Feature Summary
- Ultra-low profile package design suitable for thin applications
- Low gate threshold voltage enabling direct battery drive capability
- Integrated ESD protection exceeding 6kV under human body model conditions
Applications
- Load Switch
- Portable Applications
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix matches the required packaging configuration before procurement. Confirm that the component meets all applicable environmental compliance standards relevant to the target market. Ensure the supplier provides valid traceability documentation for the manufacturing lot. Validate that the storage and handling procedures adhere to the specified moisture sensitivity level requirements.
Selection Notes
Select this component when space constraints require a footprint significantly smaller than standard SOT-23 packages. Consider its low gate threshold voltage for applications requiring direct logic or battery interface without additional level shifting. Evaluate the thermal performance against the system's ambient temperature limits given the high thermal resistance inherent to the small outline package.
Part Context
This part belongs to the DMP213 series of P-channel MOSFETs designed for efficiency in power management circuits. It utilizes silicon technology within a molded plastic case classified as UL 94V-0 flammability rated. The terminals are finished with NiPdAu over a copper leadframe to ensure solderability according to MIL-STD-202 standards.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout compatibility and electrical parameters such as breakdown voltage and on-resistance when evaluating potential replacements.
