DMP2160U-7

$0.32

Description：MOSFET P-CH 20V 3.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a3efcc63ed89 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.2A SOT23-3
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：80mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：627 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2160U-7

Overview

The DMP2160U-7 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20V and a continuous drain current of -3.3A at +25°C. The device exhibits a typical on-resistance of 75mΩ at VGS = -4.5V and a gate threshold voltage ranging from -0.4V to -0.9V. Total gate charge is typically 6.5nC, with turn-on rise time at 10.3ns and turn-off fall time at 22.2ns. It operates within a junction temperature range of -55°C to +150°C and is housed in an SOT-23 package.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features very low gate threshold voltage to facilitate easy drive compatibility.
Provides fast switching speed supported by low input capacitance.
Qualified to AEC-Q 101 standards for automotive reliability.

Applications

Battery charging systems
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the component datasheet revision number against the manufacturer's official documentation to ensure electrical parameters match design requirements. Confirm that the SOT-23 package dimensions align with the PCB footprint layout. Check for specific assembly site markings if traceability is required. Ensure compliance with RoHS directives and confirm lead-free status before integration into the final product assembly process.

Selection Notes

Select this component when a compact single-channel P-channel solution is needed for low-voltage power switching. The low gate threshold voltage makes it suitable for logic-level control interfaces. Evaluate thermal performance based on the specified junction-to-ambient resistance under expected load conditions. Consider the pulsed drain current capability for handling transient loads during startup or fault conditions.

Part Context

This part belongs to the DMP2160 series of P-channel MOSFETs designed for general-purpose power switching. It serves as a surface-mount alternative to through-hole packages, offering reduced board space consumption. The device utilizes silicon technology optimized for low conduction losses while maintaining robust switching characteristics for portable electronics and battery-powered equipment.

Replacement Considerations

The datasheet explicitly states that the DMP2160U is not recommended for new designs and recommends using the DMP2120U as a replacement. Verify pinout compatibility and electrical parameter overlaps before substituting the components in existing circuits.