DMP2160UFDB-7

$0.61

Description：MOSFET 2P-CH 20V 3.8A 6UDFN
Series：-

SKU:d6204c29dd57 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 20V 3.8A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：3.8A
Rds On (Max) @ Id, Vgs：70mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id：900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs：6.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：536pF @ 10V
Power - Max：1.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：6-UDFN Exposed Pad
Supplier Device Package：U-DFN2020-6 (Type B)
Grade：-
Qualification：-

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DMP2160UFDB-7

Overview

The DMP2160UFDB-7 is a dual P-channel enhancement mode MOSFET in a U-DFN2020-6 package. It features a drain-source voltage of -20V and continuous drain current of -3.8A. On-resistance is 70mΩ at VGS=-4.5V, 85mΩ at VGS=-2.5V, and 86mΩ typical at VGS=-1.8V. Gate threshold voltage maxes at -0.9V. The device supports pulsed currents up to -13A with power dissipation of 1.4W. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Dual P-channel configuration for space-efficient circuit designs
Low on-resistance optimized for various gate drive voltages
Fast switching speed with low input/output leakage
Qualified to AEC-Q101 standards for automotive reliability

Applications

Power management circuits requiring dual P-channel control
Automotive electronics systems
Battery protection modules
Load switch applications

Procurement Notes

Verify the component datasheet revision matches DS31643 Rev. 10 - 3. Confirm the ordering suffix corresponds to the tape and reel packaging format. Ensure the specific part number variant aligns with the required thermal and electrical specifications for the target application environment.

Selection Notes

Select this component for applications needing dual P-channel MOSFETs in a compact footprint. Consider the -20V rating and low on-resistance characteristics for efficient power switching. Evaluate the thermal resistance and operating temperature range against system heat dissipation requirements.

Part Context

This component belongs to Diodes Incorporated's dual P-channel MOSFET family. It utilizes the U-DFN2020-6 (Type B) case style. The device is designed for high-reliability applications, including automotive environments, as indicated by its AEC-Q101 qualification status.