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Product Detailed Parameters
- Description：MOSFET P-CH 20V 1.5A SOT-323
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：1.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：100mOhm @ 1.5A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：627 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：350mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-323
- Package / Case：SC-70, SOT-323
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Overview
The DMP2160UW-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage of -20 V and a continuous drain current of -1.5 A at +25°C. The device exhibits low on-resistance, specified as 75 mΩ at VGS = -4.5V and ID = -1.5A, or 120 mΩ at VGS = -2.5V and ID = -1.2A. Gate threshold voltage is typically -0.6 V with a maximum of -0.9 V. Total power dissipation is rated at 350 mW, with a thermal resistance (junction to ambient) of 360 °C/W. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-resistance optimized for logic-level gate drive voltages
- Very low gate threshold voltage enabling efficient switching
- Fast switching speed supported by low input capacitance
- Qualified to AEC-Q101 standards for high reliability
Applications
- Power distribution switches
- Load switches in portable devices
- Battery protection circuits
- Automotive electronic control units
Procurement Notes
Verify the component revision level against the latest datasheet DS31521 Rev. 6-3 before procurement. Confirm that the SOT323 package dimensions match the target PCB footprint. Ensure compliance with RoHS and REACH directives if required by the end application. Check for the availability of the automotive-compliant variant DMP2160UWQ if higher reliability standards are necessary.
Selection Notes
Select this component when a compact P-channel switch is required for low-voltage applications. The SOT323 package suits space-constrained designs. Evaluate the thermal resistance of 360 °C/W to ensure adequate heat dissipation within the 350 mW power limit. Consider the DMP2165UW as an alternative if newer design guidelines are preferred, as the DMP2160UW is marked not recommended for new design.
Part Context
The DMP2160UW belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It is designed for general-purpose switching applications requiring small form factors. The device utilizes silicon technology and is housed in a lead-free SOT323 case. It is distinct from dual-channel variants like the DMP2160UFDB-7 and single-channel SOT-23 versions such as the DMP2120U-7.
Replacement Considerations
The datasheet explicitly recommends using the DMP2165UW as a replacement for new designs.
