DMP2170U-13

$0.06

Description：MOSFET P-CH 20V 3.1A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:05f5bd9d59b0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.1A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：90mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：303 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：780mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2170U-13

Overview

The DMP2170U-13 is a surface-mount P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (Vdss) of -20 V and a continuous drain current (Id) of -3.1 A at +25°C. The device offers a maximum on-resistance (Rds(on)) of 90 mΩ at Vgs = -4.5 V and 250 mΩ at Vgs = -2.5 V. Total power dissipation is rated at 780 mW, with an operating junction temperature range from -55°C to +150°C. It utilizes a SOT-23 package.

Feature Summary

Qualified to AEC-Q101 standards for high reliability automotive applications
Designed to minimize on-state resistance while maintaining superior switching performance
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

Battery charging systems
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets the required AEC-Q101 qualification standards if intended for automotive use. Ensure the selected package matches the SOT-23 footprint requirements for the target PCB layout.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low on-resistance in a small form factor. Consider the thermal resistance characteristics when determining heat dissipation needs. Verify gate drive voltage levels against the specified Rds(on) thresholds to ensure optimal efficiency in the final application circuit.

Part Context

This part belongs to the DMP2170 series of P-channel enhancement mode MOSFETs. It is designed for high-efficiency power management applications where low on-state resistance and fast switching are critical. The device is suitable for portable electronics and automotive environments due to its robust construction and compliance with industry reliability standards.

Replacement Considerations

DMP2170U-7 is a verified substitute offering identical electrical specifications but packaged in a 3,000-unit tape and reel instead of the 10,000-unit configuration.