DMP2170U-7

$0.34

Description：MOSFET P-CH 20V 3.1A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b486e479f2f0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 3.1A SOT23
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
Rds On (Max) @ Id, Vgs：90mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id：1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7.8 nC @ 10 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：303 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：780mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：SOT-23-3
Package / Case：TO-236-3, SC-59, SOT-23-3

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DMP2170U-7

Overview

The DMP2170U-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT-23 package. It features a drain-source voltage (Vdss) of -20V and a continuous drain current (Id) of -3.1A at +25°C. The maximum on-resistance (Rds(on)) is 90mΩ at Vgs = -4.5V and 250mΩ at Vgs = -2.5V. Gate-source voltage (Vgs) is rated at ±12V, with a threshold voltage (Vgs(th)) max of -1.25V. Total gate charge (Qg) is 3.6nC at Vgs = -4.5V. Operating temperature range is -55°C to +150°C.

Feature Summary

Designed for high-efficiency power management applications with minimized on-state resistance.
Qualified to AEC-Q101 standards for automotive reliability.
Totally lead-free and fully RoHS compliant.
Halogen and antimony free green device.

Applications

Battery charging
Power management functions
DC-DC converters
Portable power adaptors

Procurement Notes

Verify the specific ordering suffix (-7 or -13) to confirm tape and reel packaging quantity. Confirm that the component meets AEC-Q101 requirements if used in automotive contexts. Ensure the SOT-23 package dimensions align with PCB layout constraints. Check for RoHS compliance documentation if required by regulatory standards.

Selection Notes

Select this component for low-voltage, high-current switching applications requiring compact surface-mount packaging. Consider the thermal resistance and power dissipation limits when designing heat sinks or copper planes. Evaluate gate drive voltage levels to ensure optimal Rds(on) performance. Verify input capacitance and gate charge values against switching frequency requirements.

Part Context

This part belongs to the DMP2170 series of P-channel MOSFETs from Diodes Incorporated. It is designed to offer superior switching performance alongside low on-resistance. The SOT-23 package provides a small footprint suitable for portable electronics. The product is intended for general-purpose power management tasks.

Replacement Considerations

Check datasheets for alternative P-channel MOSFETs with similar Vdss, Id, and Rds(on) specifications. Verify package compatibility and pinout alignment. Ensure thermal characteristics and gate charge parameters match system requirements.