DMP21D1UT-13

DMP21D1UT-13

$0.03
  • Description:MOSFET BVDSS: 8V~24V SOT523 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:2e288fa35c07 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 8V~24V SOT523 T&R
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:630mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
  • Rds On (Max) @ Id, Vgs:710mOhm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:1.4 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:33 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):260mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-523
  • Package / Case:SOT-523

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DMP21D1UT-13

Overview

The DMP21D1UT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of -0.63A at +25°C, with an on-resistance of 710mΩ at VGS = -4.5V. Packaged in an SOT523 surface-mount format, it includes ESD protection for the gate terminal.

Feature Summary

  • Low on-resistance for high-efficiency power management
  • Fast switching speed with low input capacitance
  • ESD protected gate structure
  • Totally lead-free and fully RoHS compliant

Applications

  • DC-DC converters
  • Load switches
  • Power-management functions

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the component meets the required environmental standards, specifically the halogen-free and antimony-free 'Green' device definitions provided by the manufacturer. Ensure compatibility with the specified SOT523 package dimensions during PCB layout.

Selection Notes

Select this component for applications requiring a compact P-channel switch with low on-state resistance. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions. Consider the gate threshold voltage specifications when designing the driving circuitry to ensure reliable turn-on and turn-off states under varying load currents.

Part Context

This part belongs to the DMP21 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMP21D1UT variant specifically targets high-efficiency power management applications within a small SOT523 footprint.

Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before substituting any alternative components.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is -0.63A at a case temperature of +25°C.

Is the gate terminal protected against electrostatic discharge?

Yes, the device features an ESD protected gate structure.

DMP21D1UT-13DMP21D1UT-13
$0.03
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