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The DMP21D1UT-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device provides a maximum continuous drain current of -0.63A at +25°C, with an on-resistance of 710mΩ at VGS = -4.5V. Packaged in an SOT523 surface-mount format, it includes ESD protection for the gate terminal.
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel carrier configuration. Confirm that the component meets the required environmental standards, specifically the halogen-free and antimony-free 'Green' device definitions provided by the manufacturer. Ensure compatibility with the specified SOT523 package dimensions during PCB layout.
Select this component for applications requiring a compact P-channel switch with low on-state resistance. Evaluate the thermal resistance characteristics against the expected duty cycle and ambient temperature conditions. Consider the gate threshold voltage specifications when designing the driving circuitry to ensure reliable turn-on and turn-off states under varying load currents.
This part belongs to the DMP21 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to minimize on-state resistance while maintaining superior switching performance. The DMP21D1UT variant specifically targets high-efficiency power management applications within a small SOT523 footprint.
Consult the manufacturer's documentation for officially confirmed substitute part numbers. Verify pinout compatibility and electrical parameter alignment before substituting any alternative components.
The maximum continuous drain current is -0.63A at a case temperature of +25°C.
Yes, the device features an ESD protected gate structure.