DMP21D1UT-7

Overview

The DMP21D1UT is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT523 package. It features a drain-source voltage (V_DSS) of -20V and a gate-source voltage (V_GSS) rating of ±8V. The device provides low on-resistance, specified as 710mΩ maximum at V_GS = -4.5V with I_D = -400mA, 930mΩ at V_GS = -2.5V with I_D = -300mA, and 1250mΩ at V_GS = -1.8V with I_D = -100mA. Continuous drain current reaches -0.63A at +25°C. Key electrical parameters include a gate threshold voltage (V_GS(TH)) ranging from -0.5V to -1.0V, total gate charge (Q_g) of 1.4nC typical, and input capacitance (C_iss) of 33pF typical. Operating temperature spans -55°C to +150°C.

Feature Summary

• Low on-state resistance optimized for high-efficiency power management
• Low gate threshold voltage enabling efficient drive compatibility
• Low input capacitance supporting fast switching speeds
• ESD protected gate structure

Applications

• DC-DC converters
• Load switches
• Power-management functions

Procurement Notes

Verify the specific ordering suffix when purchasing. The DMP21D1UT part number refers to the component itself; availability depends on the packing quantity variant selected, such as the -7 suffix for 3000 units per tape and reel or the -13 suffix for 10000 units. Confirm compliance requirements including RoHS and Halogen-free status directly with the supplier or manufacturer documentation prior to procurement.

Selection Notes

Select this component for applications requiring a compact P-channel MOSFET with a -20V breakdown voltage. Ensure the gate drive voltage meets the minimum requirements for the desired on-resistance level, as R_DS(on) increases significantly at lower gate voltages like -1.8V. Consider the thermal resistance characteristics and package size constraints inherent to the SOT523 form factor during circuit design.

Part Context

This component belongs to the DMP series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes a modern generation process designed to minimize on-state resistance while maintaining superior switching performance. The device is housed in a lead-free SOT523 package, which is a molded plastic construction classified as UL 94V-0 flammability rated.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.

FAQ

What is the maximum continuous drain current for the DMP21D1UT?

The maximum continuous drain current is -0.63A at an ambient temperature of +25°C and reduces to -0.51A at +75°C.

Does the DMP21D1UT have an internal body diode?

Yes, the datasheet specifies a Maximum Continuous Body Diode Forward Current (I_S) of -0.4A and provides forward voltage characteristics in the electrical data.

What is the typical total gate charge (Qg) for this MOSFET?

The typical total gate charge is 1.4nC, measured under conditions of V_GS = -4.5V, V_DS = -15V, and I_D = -1A.