DMP21D6UFD-7

$0.26

Description：MOSFET P-CH 20V 600MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ef94a21f5c7b Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 600MA 3DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：600mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：1Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.8 nC @ 8 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：46.1 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：400mW
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1212-3
Package / Case：3-UDFN

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DMP21D6UFD-7

Overview

The DMP21D6UFD-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X1-DFN1212-3 package. It features a drain-source voltage (V_DSS) of -20V and a continuous drain current (I_D) of -600mA at +25°C. The device offers low on-state resistance (R_DS(ON)), with maximum values of 1.0Ω at V_GS = -4.5V, 1.5Ω at -2.5V, 2.0Ω at -1.8V, and 3.0Ω at -1.5V. Gate threshold voltage (V_GS(TH)) is maximized at -1.0V. Total gate charge (Q_g) is 0.5nC at V_GS = -4.5V. Thermal resistance (R_θJA) is 280°C/W on FR-4 with minimum pads, or 140°C/W with a 1-inch copper plate.

Feature Summary

Low on-resistance for high efficiency power management
Very low gate threshold voltage (-1.0V max)
Low input capacitance and fast switching speed
ESD protected gate structure

Applications

DC-DC Converters
Power Management Functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance with RoHS 2 and halogen-free requirements as defined by the manufacturer's green product standards. Ensure the X1-DFN1212-3 package dimensions align with the target PCB footprint layout.

Selection Notes

Select this component for applications requiring a compact P-channel switch with a -20V rating. Evaluate thermal performance based on the specific PCB copper area, as R_θJA varies significantly between minimum pad layouts and large copper planes. Consider the low gate threshold voltage for compatibility with low-voltage logic drivers.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET series designed to minimize on-state resistance while maintaining superior switching performance. It utilizes an X1-DFN1212-3 case material made of molded plastic with UL 94V-0 flammability classification. The terminals are NiPdAu over a copper leadframe, ensuring solderability per MIL-STD-202 Method 208.