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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT23 T&R 3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：110mOhm @ 2.6A, 4.5V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5.3 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：250 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.08W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP2225LQ-7 is a dual N-channel enhancement mode field-effect transistor manufactured by Diodes Incorporated. It features a maximum drain-source voltage of 20V and a continuous drain current rating of 3A at room temperature. The device utilizes a low on-resistance technology to minimize conduction losses. It is housed in a compact SOT-363 surface-mount package, designed for efficient thermal performance and space-constrained applications.
Feature Summary
- Dual configuration integrating two independent N-channel MOSFETs within a single package
- Low on-resistance characteristics optimized for power efficiency
- Enhancement mode operation suitable for logic-level switching applications
Applications
- DC-DC converter circuits
- Load switching modules
- Power management integrated circuits
Procurement Notes
Verify the manufacturer marking and date code against official Diodes Incorporated documentation. Confirm the package type matches the specified SOT-363 footprint. Ensure the component grade aligns with the intended operational environment requirements before integration into production designs.
Selection Notes
Select this component when a dual N-channel configuration is required in a minimal footprint. Evaluate the thermal resistance parameters relative to the expected load current. Compare the gate charge specifications against the driving circuit capabilities to ensure adequate switching speed and drive strength.
Part Context
This component belongs to the family of dual MOSFET devices offered by Diodes Incorporated. These parts are engineered to replace discrete dual-transistor solutions, reducing board space and assembly complexity. The series supports various voltage ratings tailored for portable electronics and industrial control systems.
Replacement Considerations
Consult official substitution guides for verified equivalents. Cross-reference pin configurations and electrical limits carefully. Generic replacements may differ in thermal or switching performance.
