DMP22D4UFA-7B

$0.34

Description：MOSFET P-CH 20V 330MA 3DFN0806H4
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:212a7d2d8aa7 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 20V 330MA 3DFN0806H4
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：330mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.2V, 4.5V
Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.4 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：28.7 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：400mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0806-3
Package / Case：3-XFDFN

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DMP22D4UFA-7B

Overview

The DMP22D4UFA-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (V(BR)DSS) of -20 V and a continuous drain current (ID) of -330 mA at TA = 25°C. The device exhibits a maximum static drain-source on-resistance (RDS(ON)) of 1.9 Ω at VGS = -4.5 V, with higher resistance values at lower gate voltages. Total power dissipation is rated at 400 mW, and the operating junction temperature range spans from -55 °C to +150 °C.

Feature Summary

Low package profile with a maximum height of 0.4 mm and a footprint 16 times smaller than SOT23
Very low gate threshold voltage of 1.0 V maximum for efficient drive requirements
ESD protected gate structure integrated within the component design
Qualified to AEC-Q101 standards for high reliability automotive applications

Applications

General purpose interfacing switch
Power management functions
Analog switch

Procurement Notes

Verify the specific ordering suffix '-7B' against official manufacturer documentation to confirm packaging details, as standard datasheets may reference different suffixes like '-7'. Confirm RoHS compliance status and halogen-free 'Green' device definitions directly with the supplier or manufacturer before procurement. Ensure the X2-DFN0806-3 package dimensions match the target PCB layout constraints.

Selection Notes

Select this component when a compact surface-mount solution is required for low-voltage P-channel switching. The low gate threshold voltage supports logic-level driving capabilities. Evaluate the thermal resistance characteristics and available board space, as the small footprint limits heat dissipation compared to larger packages. Verify that the required on-resistance at the specific application gate voltage falls within acceptable performance limits.

Part Context

This part belongs to the DMP22D4UFA series of P-channel MOSFETs designed for high-efficiency power management. It utilizes an X2-DFN0806-3 case configuration made from molded plastic with a green molding compound. The terminals are finished with NiPdAu over a copper leadframe, ensuring solderability per MIL-STD-202 standards.