DMP22D5UFA-7B

$0.03

Description：MOSFET BVDSS: 8V~24V X2-DFN0806-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:61dc9e727f55 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN0806-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：17 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：370mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN0806-3
Package / Case：3-XFDFN

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DMP22D5UFA-7B

Overview

The DMP22D5UFA-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device utilizes an X2-DFN0806-3 surface-mount package with a maximum height of 0.4mm. Key electrical parameters include a maximum gate-source voltage of ±8V, a typical static on-resistance of 1.9Ω at VGS = -4.5V, and a continuous drain current of -360mA at +25°C.

Feature Summary

Designed for high-efficiency power-management applications through minimized on-state resistance and superior switching performance.
Features a very low gate threshold voltage of 1.0V maximum, enabling efficient drive from low-voltage logic sources.
Incorporates ESD protection on the gate terminal to enhance reliability during handling and operation.
Utilizes a compact X2-DFN0806-3 package that significantly reduces footprint compared to traditional SOT23 packages.

Applications

General-purpose interfacing switches
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-7B' against official Diodes documentation to confirm the 10k tape and reel packing quantity. Ensure the component meets RoHS 3 compliance requirements if mandated by your design specifications. Cross-reference the datasheet revision DS45308 Rev. 3-2 to validate all electrical characteristics prior to final procurement decisions.

Selection Notes

Select this component when space constraints require a small footprint, as the X2-DFN0806-3 package offers a 0.48mm² area. Consider its low gate threshold voltage for compatibility with low-voltage control signals. Evaluate the thermal resistance and power dissipation limits relative to your expected operating currents and ambient temperatures to ensure safe operation within the specified junction temperature range.

Part Context

This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. The series focuses on providing low on-resistance in compact packages suitable for portable and space-sensitive electronics. The DMP22D5UFA variant specifically targets applications requiring moderate current handling capabilities within a minimal physical profile.

Replacement Considerations

Consult official Diodes documentation or authorized distributors for confirmed substitute part numbers. Do not assume functional equivalence based solely on similar pinouts or voltage ratings without verifying detailed electrical parameters.