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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：17 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMP22D5UFB4-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source voltage rating and a maximum continuous drain current of -0.4A at +25°C. The device offers a low on-state resistance, specified as 1.9Ω at VGS = -4.5V and ID = -100mA, or 2.4Ω at VGS = -2.5V and ID = -50mA. It operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN1006-3 surface-mount package.
Feature Summary
- Ultra-small footprint of 0.6mm², significantly reducing board space compared to traditional SOT23 packages.
- Low profile construction with a height of 0.4mm, suitable for compact portable electronics.
- Integrated ESD protection circuitry to safeguard against electrostatic discharge events.
- Fast switching speed combined with low gate threshold voltage for efficient power management.
Applications
- Portable electronics
- Power management circuits
- Battery-powered devices
Procurement Notes
Verify the specific ordering suffix '-7B' corresponds to the 10,000-unit reel configuration in the X2-DFN1006-3 package. Confirm compliance with RoHS 2, RoHS 3, and halogen/antimony-free requirements. Ensure the application environment respects the maximum junction temperature limit of +150°C and thermal dissipation constraints defined in the datasheet.
Selection Notes
Select this component when board space is constrained due to its minimal 0.6mm² footprint. Choose this part for applications requiring fast switching and low on-resistance at low gate drive voltages. Verify that the required drain current does not exceed the -0.4A steady-state limit at +25°C ambient temperature.
Part Context
This component belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. The series focuses on minimizing on-state resistance while maintaining superior switching performance. The X2-DFN1006-3 package provides a lead-free, green molding compound solution with UL flammability classification 94V-0.
Replacement Considerations
The DMP22D5UFB4-7R is a verified substitute offering identical electrical characteristics but packaged in a 3,000-unit reel size instead of the 10,000-unit configuration.
