DMP22D5UFB4-7R

$0.03

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:9467a2de0bbe Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
Vgs (Max)：±8V
Input Capacitance (Ciss) (Max) @ Vds：17 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：460mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DFN1006-3
Package / Case：3-XFDFN

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DMP22D5UFB4-7R

Overview

The DMP22D5UFB4-7R is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -0.4 A at +25°C. The device offers a maximum on-resistance (R_DS(on)) of 1.9 Ω at V_GS = -4.5 V, with higher resistance values at lower gate voltages. It operates within a temperature range of -55°C to +150°C and utilizes an X2-DFN1006-3 package.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Features a compact footprint of 0.6mm², significantly smaller than standard SOT23 packages.
Includes integrated ESD protection and a low gate threshold voltage for fast switching performance.

Applications

Portable electronics
High efficiency power management circuits

Procurement Notes

Verify the specific ordering suffix '-7R' against official Diodes Incorporated documentation to confirm reel size and packing quantity specifications. Ensure that the X2-DFN1006-3 package dimensions and thermal characteristics align with your printed circuit board layout requirements before finalizing procurement.

Selection Notes

Select this component when space constraints are critical due to its ultra-small footprint. Consider the R_DS(on) variations at different gate drive voltages (-1.5V to -4.5V) to ensure compatibility with your system's logic levels. Verify thermal dissipation capabilities based on your specific PCB copper area and via configuration.

Part Context

This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. It is designed to balance low on-resistance with superior switching performance in a miniature surface-mount package suitable for modern portable devices.