SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DMP22D5UFB4Q-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device utilizes an X2-DFN1006-3 package with a maximum profile height of 0.4mm. Key electrical parameters include a gate-source voltage rating of ±8V, a continuous drain current of -0.4A at +25°C, and a power dissipation capacity of 0.46W on FR-4 substrate.
Verify the component authenticity through authorized Diodes Incorporated distribution channels. Confirm that the ordering suffix matches the required reel size and tape pitch specifications. Ensure compliance with RoHS 2, RoHS 3, and halogen-free requirements as defined by the manufacturer. Validate that the manufacturing facility holds IATF 16949 certification if automotive qualification is necessary.
Select this component when minimizing PCB area is critical due to its ultra-small X2-DFN1006-3 package. Consider the device for low-voltage applications requiring a -20V rating and fast switching speeds. Evaluate thermal performance based on the specific copper pad layout and ambient operating conditions. Ensure the gate drive voltage aligns with the specified threshold characteristics for optimal on-resistance.
This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. It is specifically engineered to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions across various consumer and industrial sectors.
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference package dimensions and pin configurations before implementation.
Yes, the component is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.
The maximum operating junction temperature (TJ) is +150°C.