DMP22D5UFB4Q-7B

DMP22D5UFB4Q-7B

$0.03
  • Description:MOSFET BVDSS: 8V~24V X2-DFN1006-
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:ef741ca03766 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 8V~24V X2-DFN1006-
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):20 V
  • Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
  • Rds On (Max) @ Id, Vgs:1.9Ohm @ 100mA, 4.5V
  • Vgs(th) (Max) @ Id:1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:0.3 nC @ 4.5 V
  • Vgs (Max):±8V
  • Input Capacitance (Ciss) (Max) @ Vds:17 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):460mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:X2-DFN1006-3
  • Package / Case:3-XFDFN

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DMP22D5UFB4Q-7B

Overview

The DMP22D5UFB4Q-7B is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and operates within a junction temperature range of -55°C to +150°C. The device utilizes an X2-DFN1006-3 package with a maximum profile height of 0.4mm. Key electrical parameters include a gate-source voltage rating of ±8V, a continuous drain current of -0.4A at +25°C, and a power dissipation capacity of 0.46W on FR-4 substrate.

Feature Summary

  • Extremely compact footprint of 0.6mm², significantly reducing board space compared to traditional SOT23 packages.
  • Low profile construction with a maximum height of 0.4mm, suitable for space-constrained portable electronics.
  • Integrated ESD protection circuitry to safeguard against electrostatic discharge events.
  • Designed for low gate threshold voltage operation to facilitate efficient switching in power management applications.

Applications

  • Portable electronics
  • Automotive applications requiring specific change control
  • High efficiency power management

Procurement Notes

Verify the component authenticity through authorized Diodes Incorporated distribution channels. Confirm that the ordering suffix matches the required reel size and tape pitch specifications. Ensure compliance with RoHS 2, RoHS 3, and halogen-free requirements as defined by the manufacturer. Validate that the manufacturing facility holds IATF 16949 certification if automotive qualification is necessary.

Selection Notes

Select this component when minimizing PCB area is critical due to its ultra-small X2-DFN1006-3 package. Consider the device for low-voltage applications requiring a -20V rating and fast switching speeds. Evaluate thermal performance based on the specific copper pad layout and ambient operating conditions. Ensure the gate drive voltage aligns with the specified threshold characteristics for optimal on-resistance.

Part Context

This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. It is specifically engineered to minimize on-state resistance while maintaining superior switching performance. The product line targets high-efficiency power management solutions across various consumer and industrial sectors.

Replacement Considerations

Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference package dimensions and pin configurations before implementation.

FAQ

Is the DMP22D5UFB4Q-7B suitable for automotive applications?

Yes, the component is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications requiring specific change control.

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJ) is +150°C.

DMP22D5UFB4Q-7BDMP22D5UFB4Q-7B
$0.03
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