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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V X2-DFN1006-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：1.9Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.3 nC @ 4.5 V
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：17 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：460mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：X2-DFN1006-3
- Package / Case：3-XFDFN
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Overview
The DMP22D5UFB4Q-7R is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -0.4 A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 1.9 Ω at VGS = -4.5 V, with a gate threshold voltage (VGS(TH)) ranging from -0.4 V to -1.0 V. Packaged in an X2-DFN1006-3 footprint measuring 1.0 mm x 0.6 mm x 0.4 mm, it supports an operating temperature range of -55°C to +150°C.
Feature Summary
- Ultra-small footprint of 0.6mm², significantly reducing board space compared to traditional SOT23 packages.
- Low profile construction with a height of 0.4mm, suitable for compact portable electronics.
- AEC-Q101 qualified and PPAP capable for automotive applications requiring specific change control.
- Integrated ESD protection and fast switching speed for high-efficiency power management.
Applications
- Portable electronics
- Automotive applications requiring specific change control
Procurement Notes
Verify the complete part number including the suffix (e.g., -7R or -7B) to confirm reel size and packing quantity. Confirm RoHS compliance and halogen-free status as specified in the datasheet notes. Ensure the ordering information matches the required tape width and pitch for automated assembly equipment.
Selection Notes
Select this component when minimizing PCB area is critical due to its 0.6mm² footprint. Consider the -20V rating and -0.4A current limit for low-power switching tasks. Verify that the gate drive voltage meets the threshold requirements for the desired RDS(ON). Check thermal performance against the junction-to-ambient resistance values provided for your specific board layout.
Part Context
This part belongs to the DMP22 series of P-channel MOSFETs designed for low-voltage applications. It utilizes silicon technology and is housed in an X2-DFN1006-3 package. The device is lead-free, fully RoHS compliant, and manufactured in IATF 16949 certified facilities.
Replacement Considerations
DMP22D5UFB4Q-7B is a verified substitute with identical electrical characteristics but a different packing quantity (10,000 units per reel vs. 3,000 units).
