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Product Detailed Parameters
- Description：MOSFET P-CH 20V 430MA SOT523
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：430mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：1.1Ohm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±8V
- Input Capacitance (Ciss) (Max) @ Vds：175 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：150mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMP22D6UT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SOT523 package and operates with a drain-source voltage of -20 V and a gate-source voltage of ±8 V. The device supports a steady-state drain current of -430 mA at +25°C and -310 mA at +85°C, with a pulsed drain current capability of -750 mA. Total power dissipation is rated at 150 mW, and the junction-to-ambient thermal resistance is 833 °C/W. The operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low on-resistance for efficient conduction
- Low gate threshold voltage for easy drive compatibility
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Battery protection circuits
- Power management systems
- Load switching applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets the required environmental standards, including being halogen and antimony free. Ensure the selected part aligns with the JEDEC high reliability qualification requirements specified in the datasheet documentation.
Selection Notes
Select this component when a compact P-channel MOSFET solution is required within a SOT523 footprint. Consider the low input capacitance and fast switching speed for high-frequency operation. Evaluate the thermal resistance and power dissipation limits against the expected ambient temperature conditions to ensure reliable performance under load.
Part Context
This component belongs to the DMP22D6UT series of P-channel enhancement mode MOSFETs. It is designed for general-purpose switching applications requiring small form factors. The product line emphasizes efficiency through low on-resistance and ease of integration via low gate threshold voltages.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q100/101/104/200 qualification, refer to the related automotive grade parts with the Q-suffix as indicated in the manufacturer's documentation.
