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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V POWERDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：42A (Ta), 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：1.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：1.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：585 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：12826 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：104W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8 (Type Q)
- Package / Case：8-PowerTDFN
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Overview
The DMP22M1UPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage rating of 20 V and supports continuous drain currents of 42 A at ambient temperature and 60 A at case temperature. The device offers a maximum on-resistance of 5.8 mΩ, ensuring efficient power handling with a power dissipation capacity of 104 W. Packaged in the PowerDI5060-8 format, it is designed for surface-mount applications requiring high current density.
Feature Summary
- P-channel enhancement mode operation for low-side switching configurations
- High current capability supporting up to 60 A at case temperature
- Ultra-low on-resistance for minimized conduction losses
- Robust thermal performance within the PowerDI5060-8 package
Applications
- Power distribution units and load switches
- Battery protection circuits
- Motor control systems
- DC-DC converter output stages
Procurement Notes
Verify component authenticity through authorized Diodes Incorporated channels or certified distributors. Confirm RoHS compliance status and specific tape-and-reel packaging details prior to order placement. Ensure storage conditions adhere to manufacturer guidelines to maintain solderability and electrical integrity during assembly processes.
Selection Notes
Select this component when designing circuits requiring high continuous current handling in compact surface-mount footprints. Evaluate thermal management requirements carefully due to the 104 W dissipation rating. Compare against alternative packages if board space constraints differ from the PowerDI5060-8 dimensions. Validate gate drive compatibility with the specified threshold voltages for reliable switching.
Part Context
This part belongs to the DMP22 series of P-channel MOSFETs from Diodes Incorporated. The series focuses on delivering high-performance switching capabilities in advanced small-outline packages. The DMP22M1UPSW-13 specifically utilizes the PowerDI5060-8 technology to achieve superior thermal conductivity and current carrying capacity compared to standard SOT packages.
Replacement Considerations
Direct substitutes include other Diodes Incorporated parts within the DMP22 series sharing identical pinouts and thermal profiles. Cross-reference datasheets for exact Rds(on) and current ratings to ensure functional equivalence in existing designs.
