DMP2541UCP9-7

$0.21

Description：MOSFET BVDSS: 25V~30V X2-DSN1515
Series：-
Mfr：Diodes Incorporated
Package：Bulk

SKU:789fdc34605e Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V X2-DSN1515
Series：-
Mfr：Diodes Incorporated
Package：Bulk
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：25 V
Current - Continuous Drain (Id) @ 25°C：3.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：40mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id：1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：4.7 nC @ 4.5 V
Vgs (Max)：-6V
Input Capacitance (Ciss) (Max) @ Vds：566 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X2-DSN1515-9 (Type B)
Package / Case：9-XFBGA, DSBGA

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DMP2541UCP9-7

Overview

The DMP2541UCP9-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in an X2-DSN1515-9 (Type B) package. It features a drain-source voltage of -25V and a maximum on-resistance of 40mΩ at VGS = -4.5V. The device supports a continuous drain current of -3.8A at +25°C and operates within a temperature range of -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
Features low gate charge and gate-drain charge characteristics to optimize dynamic switching behavior.

Applications

Battery management systems
Load switches
Battery protections

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the tape and reel packaging configuration with a quantity of 3,000 units per carrier. Confirm that the component meets RoHS compliance standards and is halogen-free if required by your manufacturing specifications. Ensure compatibility with the specified X2-DSN1515-9 footprint during procurement.

Selection Notes

Select this component when a compact 1.5mm x 1.5mm footprint is required for P-channel switching applications. Consider its low on-resistance and fast switching capabilities for efficient power management designs. Verify thermal requirements against the specified junction-to-ambient resistance values for your intended PCB layout.

Part Context

This part belongs to Diodes Incorporated's new generation MOSFET portfolio, specifically engineered to balance low on-state resistance with excellent switching performance. It utilizes an advanced silicon process technology optimized for modern surface-mount assembly techniques and space-constrained electronic designs.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Consult Diodes Incorporated directly for alternative components or cross-reference options suitable for your specific application requirements.