DMP26M1UFG-13

$0.26

Description：MOSFET BVDSS: 8V~24V POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:5c37b1431a18 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
Vgs (Max)：±10V
Input Capacitance (Ciss) (Max) @ Vds：5392 pF @ 10 V
FET Feature：-
Power Dissipation (Max)：1.67W (Ta), 3W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP26M1UFG-13

Overview

The DMP26M1UFG-13 is a single-channel P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 surface-mount package and operates with a drain-source voltage (VDS) of -20 V. The device supports a continuous drain current (ID) of up to -71 A at +25°C case temperature, reducing to -56 A at +70°C. Its maximum on-state resistance (RDS(ON)) is specified as 5.5 mΩ at VGS = -4.5 V and 7.5 mΩ at VGS = -2.5 V. The component features a gate-source voltage rating of ±10 V and an operating junction temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
Totally lead-free and fully RoHS compliant, halogen and antimony free green device.

Applications

Load switches
Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the required thermal characteristics align with the intended application's heat dissipation requirements. Ensure compliance with relevant automotive or industrial standards if applicable, as standard parts may differ from qualified automotive variants.

Selection Notes

Select this component when low on-state resistance is critical for minimizing conduction losses in compact designs. Evaluate the thermal resistance parameters to ensure adequate heat dissipation within the PowerDI3333-8 package constraints. Consider the gate threshold voltage specifications to ensure compatibility with the driving circuit logic levels.

Part Context

This part belongs to the DMP26M series of P-Channel MOSFETs from Diodes Incorporated. The series focuses on providing high current capabilities in small surface-mount packages suitable for modern electronics requiring space-efficient power solutions.

Replacement Considerations

Consult official manufacturer substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions before implementation.