ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V POWERDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：71A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.5V, 4.5V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：5392 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.67W (Ta), 3W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMP26M1UFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage (V_DSS) of -20V and a maximum continuous drain current (I_D) of -71A at +25°C case temperature. The device exhibits a low on-state resistance (R_DS(ON)) of 5.5mΩ at V_GS = -4.5V and 7.5mΩ at V_GS = -2.5V. Key dynamic characteristics include a total gate charge (Qg) of 75nC at V_GS = -4.5V and turn-on/turn-off times of 9ns/69ns delay respectively.
Feature Summary
- Low RDS(ON) minimizes on-state power losses for high-efficiency operation
- PowerDI3333-8 package occupies only 33% of the board area compared to SO-8 packages
- Thermally efficient design enables higher density end products
- Totally lead-free, fully RoHS compliant, and halogen/antimony free
Applications
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against your manufacturing requirements, as they denote different packing quantities per reel. Confirm that the PowerDI3333-8 footprint matches your PCB layout guidelines. Ensure the component meets your environmental standards, specifically checking for RoHS 3 compliance and Halogen/Antimony-free status if required by your product regulations.
Selection Notes
Select this component when space constraints are critical due to its compact PowerDI3333-8 form factor. It is suitable for applications requiring high current handling up to 71A with minimal conduction losses. Consider the thermal resistance values (RθJA and RθJC) for your specific board copper area and ambient conditions to ensure junction temperatures remain within the -55°C to +150°C operating range.
Part Context
This part belongs to the DMP26M series of P-channel MOSFETs designed for power management. It utilizes silicon technology and is manufactured by Diodes Incorporated. The device is intended for surface-mount installation and is compatible with standard reflow soldering processes. It serves as a compact alternative to larger packages like SO-8 while maintaining robust electrical performance.
Replacement Considerations
Check datasheets for other parts in the DMP26M series or similar 20V P-channel MOSFETs in PowerDI3333-8 packages. Verify pinout compatibility, especially regarding the exposed drain pad configuration. Ensure replacement parts meet or exceed the original RDS(ON), V_DSS, and thermal performance specifications.
