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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V POWERDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：5392 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.34W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
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Overview
The DMP26M1UPS is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of -20V and a maximum continuous drain current (ID) of -90A at TC = +25°C. The static drain-source on-resistance (RDS(ON)) is typically 6mΩ at VGS = -4.5V and 8mΩ at VGS = -2.5V. The device supports a pulsed drain current (IDM) of -360A and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package with less than 1.1mm profile for thin applications
- Low RDS(ON) characteristics to minimize on-state power losses
- High conversion efficiency for improved power management performance
- 100% unclamped inductive switching (UIS) tested in production for robustness
Applications
- Load switch circuits
- Notebook battery power management systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets RoHS compliance standards and is halogen- and antimony-free as defined by the manufacturer's green product guidelines. Ensure the application environment remains within the specified thermal and electrical limits outlined in the datasheet.
Selection Notes
Select this component for designs requiring low on-resistance and high current handling in compact form factors. The -20V rating suits low-voltage DC-DC converters and battery protection circuits. Evaluate the thermal resistance values against the expected ambient conditions to ensure reliable operation without exceeding the maximum junction temperature limit.
Part Context
This part belongs to Diodes Incorporated's generation of MOSFETs designed to balance low conduction losses with superior switching performance. It utilizes the PowerDI surface-mount technology to provide a leadless, thermally optimized solution suitable for space-constrained portable electronics and power management modules.
Replacement Considerations
Consult official Diodes Incorporated documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility based solely on similar package types or voltage ratings without confirming pinout and electrical parameter alignment.
