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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V POWERDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：83A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：6mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：164 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：5392 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.9W (Ta), 2.6W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMP26M1UPSWQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a PowerDI5060-8/SWP surface-mount package and is qualified to AEC-Q101 standards for automotive applications. The device supports a drain-source voltage (V_DSS) of up to 30V and offers a continuous drain current (I_D) of 26A at 25°C case temperature. Key electrical characteristics include a maximum on-resistance (R_DS(on)) of 1.4 mΩ at V_GS = -10V, with a gate charge (Q_g) of 17 nC. It operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- Low on-resistance design for efficient power switching
- Surface-mount PowerDI5060-8 package for compact integration
Applications
- Automotive load switching circuits
- Power distribution units in vehicles
- Battery management systems
Procurement Notes
Verify the specific suffix Q-13 confirms AEC-Q101 qualification and automotive grade status against the official datasheet. Ensure the PowerDI5060-8/SWP package variant matches your PCB footprint requirements. Confirm RoHS compliance details directly from the manufacturer's documentation prior to finalizing procurement specifications.
Selection Notes
Select this component for high-current automotive applications requiring low conduction losses. The 30V rating suits 12V nominal systems. Evaluate thermal performance based on the 26A current rating and package thermal resistance. Compare R_DS(on) values at relevant gate drive voltages against alternative devices to ensure optimal efficiency in the target circuit design.
Part Context
This part belongs to Diodes Incorporated’s DMP series of P-channel MOSFETs designed for power management. The PowerDI family provides robust thermal performance and small footprints. The DMP26M1UPSWQ-13 specifically targets automotive markets due to its AEC-Q101 certification, distinguishing it from standard industrial variants within the broader product line.
Replacement Considerations
Check for direct substitutes such as DMP26M1UPSWQ or other DMP series parts with identical pinouts and similar electrical ratings. Verify that any replacement maintains the required AEC-Q101 qualification if used in automotive contexts.
