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Product Detailed Parameters
- Description：MOSFET P-CH 20V 18A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：18A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：6.7mOhm @ 15A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：156 nC @ 10 V
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：5940 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：2.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP26M7UFG-7 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -20V drain-source breakdown voltage and a maximum continuous drain current of -40A at case temperature +25°C. The device achieves a typical on-resistance of 6.7mΩ at VGS = -4.5V and 9.0mΩ at VGS = -2.5V. Packaged in the POWERDI3333-8 surface-mount format, it supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Low on-state resistance minimizes power losses during conduction
- POWERDI3333-8 package occupies significantly less board area than SO-8 while providing thermal efficiency
- ESD protection rated up to 1kV under Human Body Model standards
Applications
- Load Switching
- Power Management Functions
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The -7 suffix indicates tape and reel packaging with a quantity of 2000 units. Confirm that the required RoHS compliance and halogen-free status align with project specifications before finalizing procurement orders.
Selection Notes
Select this component for applications requiring high-density mounting due to its compact form factor. Ensure gate drive voltages are sufficient to achieve the lowest on-resistance values specified in the datasheet. Evaluate thermal management requirements based on the junction-to-ambient resistance characteristics provided for the target PCB layout.
Part Context
This part belongs to the DMP26M series of P-channel MOSFETs designed for high-efficiency power management. It utilizes silicon technology within the POWERDI family of packages. The device is intended for general-purpose switching applications where low conduction loss and small footprint are critical design constraints.
Replacement Considerations
Consult official manufacturer substitution lists for verified alternatives. Cross-reference pinout configurations and electrical parameters such as RDS(ON) and voltage ratings when evaluating potential replacement components.
